I-Windows

I-Silicon iyikristalu e-mono esetshenziswa ngokuyinhloko ku-semi-conductor futhi ayimunceli ezindaweni ezingu-1.2μm kuya kwezingu-6μm ze-IR.Isetshenziswa lapha njengengxenye ye-optical yezinhlelo zokusebenza zesifunda se-IR.


  • Okubalulekile:Si
  • Ukubekezelela Ububanzi:+0.0/-0.1mm
  • Ukubekezelela Ukuqina:±0.1mm
  • Ukunemba Kobuso: λ/4@632.8nm 
  • Ukufana: <1'
  • Ikhwalithi Yobuso:60-40
  • Imbobo ecacile:>90%
  • I-Bevelling: <0.2×45°
  • Ukugqoka:Idizayini Yangokwezifiso
  • Imininingwane Yomkhiqizo

    Imingcele Yezobuchwepheshe

    Umbiko wokuhlola

    I-Silicon iyikristalu e-mono esetshenziswa ngokuyinhloko ku-semi-conductor futhi ayimunceli ezindaweni ezingu-1.2μm kuya kwezingu-6μm ze-IR.Isetshenziswa lapha njengengxenye ye-optical yezinhlelo zokusebenza zesifunda se-IR.
    I-silicon isetshenziswa njengefasitela elibonakalayo ngokuyinhloko kubhendi ye-micron engu-3 kuya ku-5 nanjenge-substrate yokukhiqiza izihlungi ezibonakalayo.Amabhulokhi amakhulu e-Silicon anobuso obupholishiwe nawo asetshenziswa njengethagethi ye-neutron ekuhlolweni kwe-Physics.
    I-silicon ikhuliswa amasu okudonsa e-Czochralski (CZ) futhi iqukethe umoya-mpilo othile obangela ibhande lokumunca kuma-microns angu-9.Ukuze ugweme lokhu, i-Silicon ingalungiswa ngenqubo ye-Float-Zone (FZ).I-Optical Silicon ivamise ukudotshwa kancane (5 ukuya ku-40 ohm cm) ukuze idluliselwe kahle ngaphezu kwama-microns ayi-10.I-Silicon inebhendi yokudlula eyengeziwe engama-microns angama-30 kuye kwayi-100 esebenza kahle kuphela ezintweni ezinganxeshezelwayo eziphakeme kakhulu.I-Doping ngokuvamile i-Boron (p-type) ne-Phosphorus (n-type).
    Isicelo:
    • Ilungele izinhlelo zokusebenza ze-NIR ezingu-1.2 kuye kwezingu-7
    • I-Broadband engu-3 kuya ku-12 μm yokuhlanganisa i-anti-reflection
    • Ilungele izinhlelo zokusebenza ezizwelayo ngesisindo
    Isici:
    • Lawa mawindi e-silicon awadluliseli endaweni engu-1µm noma ngaphansi, ngakho-ke ukusetshenziswa kwawo okuyinhloko kusezifundeni ze-IR.
    • Ngenxa ye-conductivity yayo ephezulu yokushisa, ifaneleka ukusetshenziswa njengesibuko se-laser samandla aphezulu
    ▶Amafasitela e-silicon anendawo yensimbi ecwebezelayo;ikhombisa futhi imunce kodwa ayidluliseli ezindaweni ezibonakalayo.
    ▶ Ukuboniswa kwamafasitela e-Silicon kuphumela ekulahlekeni kokudlulisela okungu-53%.(idatha elinganisiwe 1 ukuboniswa kwendawo ku-27%)

    Ibanga Lokudlulisela : 1.2 ukuya ku-15 μm (1)
    I-Refractive Index : 3.4223 @ 5 μm (1) (2)
    Ukulahlekelwa Ukubonakaliswa : 46.2% ku-5 μm (izindawo ezi-2)
    I-Absorption Coefficient : 0.01 cm-1ngo 3m
    I-Reststrahlen Peak : n/a
    dn/dT : 160 x 10-6/°C (3)
    dn/dμ = 0: 10.4 μm
    Ukuminyana : 2.33 g/cc
    I-Melting Point : 1420 °C
    I-Thermal Conductivity : 163.3 W m-1 K-1ngo 273k
    Ukunwetshwa kwe-Thermal : 2.6 x 10-6/ ngo-20°C
    Ukuqina : Knoop 1150
    Amandla Okushisa Akhethekile : 703 JKg-1 K-1
    I-Dielectric Constant : 13 ku-10 GHz
    Youngs Modulus (E) : 131 GPA (4)
    I-Shear Modulus (G) : 79.9 GPA (4)
    I-Bulk Modulus (K) : 102 GPA
    I-Elastic Coefficients : C11=167;C12=65;C44=80 (4)
    Umkhawulo we-Elastic obonakalayo: 124.1MPa (18000 psi)
    Isilinganiso se-Poisson: 0.266 (4)
    Ukunyibilika : Ayincibiliki Emanzini
    Isisindo se-Molecular: 28.09
    Ikilasi/Isakhiwo : I-Cubic diamond, Fd3m

    1