I-Silicon iyikristalu e-mono esetshenziswa ngokuyinhloko ku-semi-conductor futhi ayimunceli ezindaweni ezingu-1.2μm kuya kwezingu-6μm ze-IR.Isetshenziswa lapha njengengxenye ye-optical yezinhlelo zokusebenza zesifunda se-IR.
I-silicon isetshenziswa njengefasitela elibonakalayo ngokuyinhloko kubhendi ye-micron engu-3 kuya ku-5 nanjenge-substrate yokukhiqiza izihlungi ezibonakalayo.Amabhulokhi amakhulu e-Silicon anobuso obupholishiwe nawo asetshenziswa njengethagethi ye-neutron ekuhlolweni kwe-Physics.
I-silicon ikhuliswa amasu okudonsa e-Czochralski (CZ) futhi iqukethe umoya-mpilo othile obangela ibhande lokumunca kuma-microns angu-9.Ukuze ugweme lokhu, i-Silicon ingalungiswa ngenqubo ye-Float-Zone (FZ).I-Optical Silicon ivamise ukudotshwa kancane (5 ukuya ku-40 ohm cm) ukuze idluliselwe kahle ngaphezu kwama-microns ayi-10.I-Silicon inebhendi yokudlula eyengeziwe engama-microns angama-30 kuye kwayi-100 esebenza kahle kuphela ezintweni ezinganxeshezelwayo eziphakeme kakhulu.I-Doping ngokuvamile i-Boron (p-type) ne-Phosphorus (n-type).
Isicelo:
• Ilungele izinhlelo zokusebenza ze-NIR ezingu-1.2 kuye kwezingu-7
• I-Broadband engu-3 kuya ku-12 μm yokuhlanganisa i-anti-reflection
• Ilungele izinhlelo zokusebenza ezizwelayo ngesisindo
Isici:
• Lawa mawindi e-silicon awadluliseli endaweni engu-1µm noma ngaphansi, ngakho-ke ukusetshenziswa kwawo okuyinhloko kusezifundeni ze-IR.
• Ngenxa ye-conductivity yayo ephezulu yokushisa, ifaneleka ukusetshenziswa njengesibuko se-laser samandla aphezulu
▶Amafasitela e-silicon anendawo yensimbi ecwebezelayo;ikhombisa futhi imunce kodwa ayidluliseli ezindaweni ezibonakalayo.
▶ Ukuboniswa kwamafasitela e-Silicon kuphumela ekulahlekeni kokudlulisela okungu-53%.(idatha elinganisiwe 1 ukuboniswa kwendawo ku-27%)
Ibanga Lokudlulisela : | 1.2 ukuya ku-15 μm (1) |
I-Refractive Index : | 3.4223 @ 5 μm (1) (2) |
Ukulahlekelwa Ukubonakaliswa : | 46.2% ku-5 μm (izindawo ezi-2) |
I-Absorption Coefficient : | 0.01 cm-1ngo 3m |
I-Reststrahlen Peak : | n/a |
dn/dT : | 160 x 10-6/°C (3) |
dn/dμ = 0: | 10.4 μm |
Ukuminyana : | 2.33 g/cc |
I-Melting Point : | 1420 °C |
I-Thermal Conductivity : | 163.3 W m-1 K-1ngo 273k |
Ukunwetshwa kwe-Thermal : | 2.6 x 10-6/ ngo-20°C |
Ukuqina : | Knoop 1150 |
Amandla Okushisa Akhethekile : | 703 JKg-1 K-1 |
I-Dielectric Constant : | 13 ku-10 GHz |
Youngs Modulus (E) : | 131 GPA (4) |
I-Shear Modulus (G) : | 79.9 GPA (4) |
I-Bulk Modulus (K) : | 102 GPA |
I-Elastic Coefficients : | C11=167;C12=65;C44=80 (4) |
Umkhawulo we-Elastic obonakalayo: | 124.1MPa (18000 psi) |
Isilinganiso se-Poisson: | 0.266 (4) |
Ukunyibilika : | Ayincibiliki Emanzini |
Isisindo se-Molecular: | 28.09 |
Ikilasi/Isakhiwo : | I-Cubic diamond, Fd3m |