Nd:Amakristalu e-YVO4
I-Nd:I-YVO4 iyikristalu ye-laser host esebenza kahle kakhulu yokumpompa i-diode phakathi kwamakristalu e-laser okuhweba amanje, ikakhulukazi, ekuminyana kwamandla aphansi kuye kwaphakathi.Lokhu ikakhulukazi ngenxa yezici zayo zokumunca nokuphumayo okudlula i-Nd:YAG.Igxishwe ama-laser diode, i-Nd:YVO4 crystal ihlanganiswe namakristalu e-coefficient e-NLO aphezulu (i-LBO, BBO, noma i-KTP) ukuze iguqule okukhiphayo kusuka kokuseduze kwe-infrared kuya kokuluhlaza, okuluhlaza okwesibhakabhaka, noma i-UV imbala.Lokhu kuhlanganiswa kokwakha wonke ama-laser wesimo esiqinile iyithuluzi le-laser elikahle elingamboza ukusetshenziswa okusakazeke kakhulu kwama-lases, okuhlanganisa imishini, ukucutshungulwa kwezinto ezibonakalayo, i-spectroscopy, ukuhlolwa kwe-wafer, izibonisi zokukhanya, ukuxilonga kwezokwelapha, ukuphrinta kwe-laser, nokugcinwa kwedatha, njll. kukhonjisiwe ukuthi i-Nd:YVO4 based diode pumped solid state lasers ahlala ngokushesha ezimakethe ngokwesiko ezibuswa amalaza e-ion apholile amanzi namalaser ampontshwa isibani, ikakhulukazi uma idizayini ehlangene kanye nokuphumayo kwemodi eyodwa-longitudinal kudingeka.
Izinzuzo ze-Nd:YVO4 kune-Nd:YAG:
• Ukumunca okuphindwe kahlanu okunamandla ngaphezu komkhawulokudonsa obanzi wokumpompa ozungeze u-808 nm (ngakho-ke, ukuncika ekumpompeni ubude begagasi kuphansi kakhulu kanye nokuthambekela okunamandla kokuphumayo kwemodi eyodwa);
• Ingxenye enqamulayo ephindwe kathathu eshukunyiswa igesi enkulu kubude begagasi obungu-1064nm;
• I-low lasing threshold kanye nokusebenza kahle kwemithambeka ephezulu;
• Njengekristalu e-uniaxial ene-birefringence enkulu, ukukhishwa kwe-polarized kuphela.
Izici ze-Laser ze-Nd:YVO4:
• Olunye uhlamvu olukhanga kakhulu lwe-Nd:YVO4, uma luqhathaniswa ne-Nd:YAG, i-coefficient yalo yokumunca enkulu ngokuphindwe ka-5 kumkhawulokudonsa obanzi wokumuncwa ozungeze i-808nm peak pump wavelength, evele ifane nezinga lamaza amandla aphezulu zelaser atholakalayo njengamanje.Lokhu kusho ikristalu encane engasetshenziselwa i-laser, okuholela kusistimu ye-laser ehlangene kakhudlwana.Kumandla anikeziwe okukhiphayo, lokhu kuphinde kusho izinga eliphansi lamandla lapho i-laser diode isebenza khona, ngaleyo ndlela andise isikhathi sokuphila se-laser diode ebizayo.Umkhawulokudonsa obanzi wokumuncwa we-Nd:YVO4 ongafinyelela ku-2.4 kuya ku-6.3 izikhathi eziphindwe ka-Nd:YAG.Ngaphandle kokumpompa okusebenza kahle kakhulu, kuphinde kusho uhla olubanzi lokukhethwa kwezicaciso ze-diode.Lokhu kuzosiza abenzi besistimu ye-laser ukubekezelela okubanzi ekukhetheni izindleko eziphansi.
• I-Nd:Ikristalu ye-YVO4 inezingxenye eziphambanayo zokukhipha umoya okhuthazwayo, zombili ku-1064nm naku-1342nm.Lapho i-a-axis isika i-Nd:YVO4 crystal lasing ku-1064m, iphakama cishe izikhathi ezi-4 kunaleyo ye-Nd:YAG, kuyilapho ku-1340nm ingxenye ephambanayo ekhuthazwayo inkulu ngokuphindwe ka-18, okuholela ekusebenzeni kwe-CW okudlula ngokuphelele i-Nd:YAG. kwe 1320nm.Lokhu kwenza i-Nd:YVO4 laser kube lula ukugcina ukuphuma komugqa owodwa okuqinile kumaza wamaza amabili.
• Olunye uhlamvu olubalulekile lwama-lasers we-Nd:YVO4, ngenxa yokuthi luyi-uniaxial kune-symmetry ephezulu ye-cubic njenge-Nd:YAG, lukhipha kuphela i-laser ehlukanisiwe eqondile, ngaleyo ndlela igwema imiphumela engathandeki ye-birefringent ekuguquleni imvamisa.Nakuba isikhathi sokuphila se-Nd:YVO4 sisifushane izikhathi ezingu-2.7 kunesika-Nd:YAG, ukusebenza kahle kwayo kwemithambeka kusengaba phezulu kakhulu ukuze kuklanywe umgodi we-laser, ngenxa yokusebenza kahle kwayo kwe-quantum yephampu ephezulu.
| Ukuminyana kwe-athomu | 1.26×1020 ama-athomu/cm3 (Nd1.0%) |
| Ipharamitha ye-Crystal StructureCell | I-Zircon Tetragonal, iqembu lesikhala i-D4h-I4/amd a=b=7.1193Å,c=6.2892Å |
| Ukuminyana | 4.22g/cm3 |
| Mohs Ukuqina | 4-5 (Okufana nengilazi) |
| I-Thermal Expansion Coefficient(300K） | αa=4.43×10-6/K αc=11.37×10-6/K |
| I-Thermal Conductivity Coefficient(300K） | ∥C:0.0523W/cm/K ⊥C:0.0510W/cm/K |
| Lasing wavelength | 1064nm,1342nm |
| I-Thermal Optical Coefficient(300K） | dno/dT=8.5×10-6/K dne/dT=2.9×10-6/K |
| Isiphambano sokukhishwa okukhuthazwayo | 25×10-19cm2 @ 1064nm |
| Isikhathi sokuphila se-Fluorescent | 90μs(1%) |
| I-coefficient yokumuncwa | 31.4cm-1 @810nm |
| Ukulahlekelwa kwangaphakathi | 0.02cm-1 @1064nm |
| Thola umkhawulokudonsa | 0.96nm@1064nm |
| I-polarized laser emission | i-polarization;ihambisana ne-optical axis (c-eksisi) |
| I-Diode iphampu i-optical ukuze isebenze kahle | >60% |
Amapharamitha wezobuchwepheshe:
| I-Chamfer | < λ/4 @ 633nm |
| Ukubekezelelana kwe-Dimensional | (W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm)(L＜2.5mm）(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm)(L＞2.5mm） |
| Imbobo ecacile | Emaphakathi 95% |
| Ukucaba | λ/8 @ 633 nm, λ/4 @ 633nm(umkhaza ngaphansi kuka 2mm） |
| Ikhwalithi yobuso | 10/5 Scratch/Dig nge-MIL-O-1380A ngayinye |
| Ukufana | kangcono kunemizuzwana engama-arc angama-20 |
| I-Perpendicularity | I-Perpendicularity |
| I-Chamfer | 0.15x45deg |
| Ukugqoka | 1064nm,R＜0.2%;I-HR Coating:1064nm,R＞99.8%,808nm,T＞95% |
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